N/A

-

20 Weeks

表面贴装

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

9A Ta 7A Ta

2

150°C TJ

Cut Tape (CT)

2016

Automotive, AEC-Q101

活跃

1 (Unlimited)

8

EAR99

DUAL

鸥翼

未说明

未说明

R-PDSO-G8

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

2W

N and P-Channel

SWITCHING

18m Ω @ 9A, 10V, 28m Ω @ 7A, 10V

2.5V @ 1mA

1190pF @ 10V 2600pF @ 10V

15nC @ 5V, 25nC @ 5V

30V

N-CHANNEL AND P-CHANNEL

9A

0.025Ohm

36A

30V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

N/A

-

表面贴装

表面贴装

SOT-23-6 Thin, TSOT-23-6

6

6-TSOP

2.7A

-55°C~150°C TJ

Tape & Reel (TR)

2003

HEXFET®

Obsolete

1 (Unlimited)

150°C

-55°C

20V

960mW

2.7A

960mW

2 N-Channel (Dual)

90mOhm @ 2.7A, 4.5V

1.25V @ 250μA

400pF @ 15V

6nC @ 4.5V

1.2ns

20V

2.7A

20V

400pF

逻辑电平门

90 mΩ

Non-RoHS Compliant

含铅

N/A

-

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

SILICON

2

26.3 ns

-55°C~150°C TJ

Tape & Reel (TR)

2002

OptiMOS™

Obsolete

1 (Unlimited)

8

EAR99

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

2W

鸥翼

BSO211

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

7.8 ns

2 P-Channel (Dual)

SWITCHING

67m Ω @ 4.7A, 4.5V

1.2V @ 25μA

920pF @ 15V

23.9nC @ 4.5V

10.6ns

20V

23.3 ns

4.7A

12V

0.067Ohm

20V

METAL-OXIDE SEMICONDUCTOR

逻辑电平门

无

符合RoHS标准

N/A

-

6 Weeks

ACTIVE (Last Updated: 2 days ago)

表面贴装

8-PowerWDFN

YES

8

SILICON

2

-55°C~150°C TJ

Tape & Reel (TR)

NexFET™

yes

活跃

1 (Unlimited)

6

雪崩 额定

无铅

CSD87313

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

SOURCE

2.7W

2 N-Channel (Dual) Common Drain

SWITCHING

1.2V @ 250μA

4290pF @ 15V

28nC @ 4.5V

30V

67 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

5.5mOhm

200 pF

3.3mm

3.3mm

750μm

ROHS3 Compliant

N/A

-

表面贴装

SOT-23-6 Thin, TSOT-23-6

SuperSOT™-6

2.4A 2.5A

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

Obsolete

1 (Unlimited)

700mW

N and P-Channel

90mOhm @ 2.4A, 10V

3V @ 1mA

270pF @ 15V

3.5nC @ 5V

30V 12V

逻辑电平门

N/A

-

表面贴装

6-SSOT Flat-lead, SuperSOT™-6 FLMP

SuperSOT™-6 FLMP

7.3A

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

1.2W

2 N-Channel (Dual)

20mOhm @ 6.5A, 4.5V

1.5V @ 250μA

840pF @ 10V

11nC @ 4.5V

20V

逻辑电平门

N/A

-

YES

2

SILICON

onsemi

6 A

活跃

Bulk

SMALL OUTLINE, R-PSSO-G2

小概要

PLASTIC/EPOXY

MTB6N60ET4

RECTANGULAR

Motorola Mobility LLC

1

Obsolete

MOTOROLA INC

5.75

*

8541.29.00.95

SINGLE

鸥翼

unknown

R-PSSO-G2

不合格

SINGLE

增强型MOSFET

DRAIN

N-CHANNEL

1.2 Ω

600 V

METAL-OXIDE SEMICONDUCTOR

N/A

-

表面贴装

表面贴装

8-TSSOP (0.173, 4.40mm Width)

8

2

-55°C~150°C TJ

Digi-Reel®

2007

Obsolete

1 (Unlimited)

1.4W

1.4W

2 P-Channel (Dual)

20m Ω @ 6.5A, 4.5V

850mV @ 250μA

2100pF @ 6V

23nC @ 4.5V

12V

6.5A

8V

逻辑电平门

无

符合RoHS标准

N/A

-

12 Weeks

表面贴装

表面贴装

SOT-1205, 8-LFPAK56

SILICON

2

-55°C~175°C TJ

Tape & Reel (TR)

2013

活跃

1 (Unlimited)

6

64W

鸥翼

未说明

未说明

8

AEC-Q101; IEC-60134

R-PDSO-G6

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

DRAIN

64W

2 N-Channel (Dual)

SWITCHING

27.5m Ω @ 5A, 10V

4V @ 1mA

2137pF @ 25V

34nC @ 10V

100V

29A

0.0275Ohm

116A

100V

67 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

N/A

-

4 Weeks

表面贴装

6-TSSOP, SC-88, SOT-363

6-TSSOP

870mA Ta

-55°C~150°C TJ

Tape & Reel (TR)

2016

活跃

1 (Unlimited)

260mW Ta

2 N-Channel (Dual)

252mOhm @ 900mA, 4.5V

1.25V @ 250μA

81pF @ 15V

1.65nC @ 4.5V

30V

Standard

ROHS3 Compliant

N/A

-

1 Week

YES

4

SILICON

Renesas Electronics America Inc

SC-82

0.025 A

Bulk

活跃

LEEAD FREE, MINIMOLD, SC-82A, SOT-343MOD, CMPAK-4

小概要

PLASTIC/EPOXY

BB304CDW-TL-E

RECTANGULAR

Renesas Electronics Corporation

1

不推荐

RENESAS ELECTRONICS CORP

5.19

*

EAR99

低噪音

8541.21.00.95

DUAL

鸥翼

compliant

4

R-PDSO-G4

不合格

SINGLE WITH BUILT-IN DIODE

DUAL GATE, DEPLETION MODE

AMPLIFIER

N-CHANNEL

12 V

METAL-OXIDE SEMICONDUCTOR

0.05 pF

甚高频段

24 dB

N/A

-

表面贴装

表面贴装

6-WFDFN Exposed Pad

6

6-MicroFET (2x5)

8.7A

27 ns

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

150°C

-55°C

20V

2.2W

8.7A

2.2W

11 ns

800mW

2 N-Channel (Dual)

18mOhm @ 8.7A, 4.5V

1.5V @ 250μA

1200pF @ 10V

17nC @ 4.5V

15ns

20V

12 ns

8.7A

12V

20V

1.2nF

逻辑电平门

18mOhm

18 mΩ

无

符合RoHS标准

无铅

N/A

-

表面贴装

8

299.994654mg

6.6 ns

2

Cut Tape (CT)

e3

Obsolete

1 (Unlimited)

8

EAR99

120mOhm

Matte Tin (Sn)

150°C

-55°C

低阈值

30V

1.13W

DUAL

FLAT

260

3A

40

10

不合格

2

增强型MOSFET

3W

1.7 ns

SWITCHING

2.3ns

30V

N-CHANNEL

2.9 ns

3.7A

20V

30V

190pF

METAL-OXIDE SEMICONDUCTOR

180mOhm

120 mΩ

1mm

3mm

2mm

ROHS3 Compliant

无铅

N/A

-

表面贴装

8-PowerTDFN

8-PQFN (5x6)

9.7 ns

3.9 V

180 W

N-Channel

+ 175 C

- 20 V, + 20 V

Infineon Technologies

- 55 C

4000

SMD/SMT

56 S

AUIRFN8458TR SP001784378

Infineon

Infineon Technologies

22 nC

8 mOhms

11 ns

43 A

Tape & Reel (TR)

不用于新设计

43A (Tc)

40 V

-55°C ~ 175°C (TJ)

Reel

-

MOSFETs

Si

2 Channel

34W (Tc)

2 N-Channel (Dual)

10mOhm @ 26A, 10V

3.9V @ 25μA

2250pF @ 25V

33nC @ 10V

71 ns

40V

MOSFET

2 N-Channel

Dual N

Standard

MOSFET

N/A

-

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

SILICON

2

33 ns

-55°C~150°C TJ

Tape & Reel (TR)

2006

e0

Obsolete

1 (Unlimited)

8

EAR99

Tin/Lead (Sn/Pb)

逻辑电平兼容

-16V

710mW

鸥翼

240

not_compliant

-2.3A

30

8

不合格

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

2W

2 P-Channel (Dual)

SWITCHING

100m Ω @ 2.4A, 4.5V

1.5V @ 250μA

750pF @ 16V

18nC @ 4.5V

35ns

16V

29 ns

2.3A

10V

0.1Ohm

-16V

9A

350 mJ

METAL-OXIDE SEMICONDUCTOR

逻辑电平门

Non-RoHS Compliant

含铅

N/A

-

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

8-SO

5.2A

2

41 ns

Cut Tape (CT)

2010

HEXFET®

Obsolete

1 (Unlimited)

175°C

-55°C

2.4W

IRF7314QPBF

2.4W

18 ns

2.4W

2 P-Channel (Dual)

58mOhm @ 5.2A, 4.5V

700mV @ 250μA

913pF @ 15V

29nC @ 4.5V

26ns

20V

38 ns

-5.2A

12V

913pF

逻辑电平门

98mOhm

58 mΩ

1.4986mm

4.9784mm

3.9878mm

无

符合RoHS标准

N/A

-

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

2

22 ns

Cut Tape (CT)

2010

HEXFET®

Obsolete

1 (Unlimited)

150°C

-55°C

2W

IRF7303QPBF

增强型MOSFET

2W

6.8 ns

2 N-Channel (Dual)

50m Ω @ 2.4A, 10V

1V @ 250μA

520pF @ 25V

25nC @ 10V

21ns

30V

7.7 ns

4.9A

20V

METAL-OXIDE SEMICONDUCTOR

Standard

1.4986mm

4.9784mm

3.9878mm

无

符合RoHS标准

1990 In Stock

-

20 Weeks

表面贴装

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

9A

2

-55°C~150°C TJ

Cut Tape (CT)

活跃

1 (Unlimited)

8

EAR99

鸥翼

未说明

not_compliant

未说明

R-PDSO-G8

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

3W

2 N-Channel (Dual)

SWITCHING

21.4m Ω @ 9A, 10V

2.5V @ 1mA

640pF @ 15V

15.5nC @ 10V

30V

9A

21.4Ohm

18A

30V

4.6 mJ

METAL-OXIDE SEMICONDUCTOR

ROHS3 Compliant

N/A

-

表面贴装

表面贴装

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

8

139.989945mg

SILICON

2

16.4 ns

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

270mOhm

Matte Tin (Sn)

低阈值

-20V

1.04W

鸥翼

260

-1.7A

40

8

增强型MOSFET

1.25W

3.4 ns

2 P-Channel (Dual)

SWITCHING

270m Ω @ 1.2A, 4.5V

700mV @ 250μA (Min)

290pF @ 15V

5.25nC @ 4.5V

9.6ns

20V

9.6 ns

1.7A

12V

-20V

METAL-OXIDE SEMICONDUCTOR

逻辑电平门

950μm

3.1mm

3.1mm

无

无SVHC

ROHS3 Compliant

无铅

N/A

-

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

8-SO

3.5A 2.3A

Cut Tape (CT)

2014

HEXFET®

Obsolete

1 (Unlimited)

150°C

-55°C

2W

IRF9952QPBF

2W

2W

N and P-Channel

100mOhm @ 2.2A, 10V

1V @ 250μA

190pF @ 15V

14nC @ 10V

30V

2.3A

20V

190pF

逻辑电平门

100 mΩ

1.4986mm

4.9784mm

3.9878mm

无

符合RoHS标准

N/A

-

Renesas Electronics America Inc

Bulk

活跃

*

N/A

-

12 Weeks

表面贴装

表面贴装

SOT-1205, 8-LFPAK56

8

LFPAK56D

29.5A

-55°C~175°C TJ

Tape & Reel (TR)

2013

活跃

1 (Unlimited)

175°C

-55°C

68W

68W

2 N-Channel (Dual)

24.5mOhm @ 10A, 10V

4V @ 1mA

2436pF @ 25V

38.1nC @ 10V

100V

29.5A

2.436nF

Standard

24.5 mΩ

ROHS3 Compliant

N/A

-

表面贴装

表面贴装

8-LSOP (0.130, 3.30mm Width)

8

2

24 ns

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

-30V

800mW

-3A

800mW

2 P-Channel (Dual)

52m Ω @ 3A, 10V

3V @ 250μA

750pF @ 15V

12nC @ 5V

14ns

30V

14 ns

3A

20V

-30V

逻辑电平门

符合RoHS标准

无铅

N/A

-

22 Weeks

表面贴装

表面贴装

12-UFQFN Exposed Pad

SILICON

8

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

yes

活跃

1 (Unlimited)

12

EAR99

Matte Tin (Sn)

660mW

QUAD

无铅

S-PQCC-N12

COMPLEX

增强型MOSFET

660mW

8 N-Channel, Common Gate, Common Source

450m Ω @ 200mA, 4.5V

1V @ 250μA

190pF @ 6V

1.9nC @ 4.5V

12V

2A

2A

0.45Ohm

12V

METAL-OXIDE SEMICONDUCTOR

Standard

13 pF

ROHS3 Compliant

N/A

-

18 Weeks

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

SILICON

7.1A 22.6A

2

-55°C~175°C TJ

Tape & Reel (TR)

2016

Automotive, AEC-Q101

e3

活跃

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

1.5W

鸥翼

未说明

未说明

R-PDSO-G8

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

2 N-Channel (Dual)

SWITCHING

27m Ω @ 5A, 10V

3V @ 250μA

2127pF @ 25V

32nC @ 10V

60V

22.6A

7.1A

0.03Ohm

45A

60V

24 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant